INFINEON TECHNOLOGIES AG BSB104N08NP3GXUSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BSB104N08NP3GXUSA1

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans MOSFET N-CH 80V 13A 7-Pin WDSON T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-MBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Silver/Nickel (Ag/Ni)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
13
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
80
Avalanche Energy Rating (Eas) (mJ)
110
Pulsed Drain Current-Max (IDM) (A)
200
Drain-source On Resistance-Max (ohm)
0.0104