ASI Semiconductor, Inc. BLX39 | 搜芯易Sourcengine

ASI Semiconductor, Inc. BLX39

生命周期状态
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说明
Trans RF BJT NPN 35V 5A 60000mW
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRPM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
100
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
35
Collector-base Capacitance-Max (pF)
65