- 生命周期状态Active
- 说明RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Number of Elements1
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)20
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)10
- Collector-emitter Voltage-Max (V)35
- Transition Frequency-Nom (fT) (MHz)370
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