Ampleon Netherlands B.V. BLP9H10-30GZ | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLP9H10-30GZ

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Power Transistor, 0.616 to 0.96 GHz, 30 W, 19 dB, 50 V, SOT1483-1, LDMOS
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Reference Standard
IEC-60134
Number of Terminals
2
Power Gain-Min (Gp)
17.3 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
105 V
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
Transistor Element Material
SILICON
Drain-source On Resistance-Max
1.62 ohm