FLIP ELECTRONICS LLC BLP35M805Z | 搜芯易Sourcengine

FLIP ELECTRONICS LLC BLP35M805Z

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-N16
Configuration
SINGLE
JEDEC-95 Code
MO-229
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
16
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Power Gain-Min (Gp) (dB)
17
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Operating Temperature-Max (Cel)
225
Screening Level / Reference Standard
IEC-60134