Ampleon Netherlands B.V. BLP15M9S70Z | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLP15M9S70Z

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Power Transistor, 0 to 1.5 GHz, 70 W, 17.8 dB, 32 V, SOT1482-1, LDMOS
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
16.5
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Feedback Cap-Max (Crss) (pF)
0.45
Peak Reflow Temperature (Cel)
245
Operating Temperature-Max (Cel)
225
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
30