Ampleon Netherlands B.V. BLP15M9S70GXY | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLP15M9S70GXY

生命周期状态
Active
RoHS
符合RoHS标准
说明
BLP15M9S70G/TO270/REEL
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G2
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
15.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Feedback Cap-Max (Crss) (pF)
0.45
Operating Temperature-Max (Cel)
225
Screening Level / Reference Standard
IEC-60134