Ampleon Netherlands B.V. BLP15M9S30GZ | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLP15M9S30GZ

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Power Transistor, 0.01 to 1.5 GHz, 30 W, 19.3 dB, 32 V, SOT1483-1, LDMOS
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G2
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
16.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Feedback Cap-Max (Crss) (pF)
0.39
Operating Temperature-Max (Cel)
225
Screening Level / Reference Standard
IEC-60134