Ampleon Netherlands B.V. BLP10H605AZ | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLP10H605AZ

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF FET LDMOS 104V 22DB 12VDFN
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-N12
Configuration
Dual, Common Source
JEDEC-95 Code
MO-229
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
12
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
104
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED