FLIP ELECTRONICS LLC BLL8H0514L-130U | 搜芯易Sourcengine

FLIP ELECTRONICS LLC BLL8H0514L-130U

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-CDFM-F2
Configuration
SINGLE
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
15
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
225
Drain-source On Resistance-Max (ohm)
0.275
Screening Level / Reference Standard
IEC-60134