FLIP ELECTRONICS LLC BLF888DU | 搜芯易Sourcengine

FLIP ELECTRONICS LLC BLF888DU

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
104
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED