Ampleon Netherlands B.V. BLF6G10L-40BRN,112 | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLF6G10L-40BRN,112

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF FET LDMOS 65V 23DB SOT1112A
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
S-CQFM-X6
Configuration
Dual, Common Source
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
QUAD
Number of Elements
2
Number of Terminals
6
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
11
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Screening Level / Reference Standard
IEC-60134
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED