- 生命周期状态Active
- 说明RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Drain Current-Max (ID) (A)4.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
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