BLF1721M8LS200U
Ampleon Netherlands B.V.
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明RF Power Transistor, 1.7 to 2.1 GHz, 200 W, 19 dB, 28 V, SOT502B, LDMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFP-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Power Gain-Min (Gp) (dB)18
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Operating Temperature-Max (Cel)225
- Screening Level / Reference StandardIEC-60134
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BLF1721M8LS200U
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BLF1721M8LS200U