Ampleon Netherlands B.V. BLC9H10XS-350AY | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLC9H10XS-350AY

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Transistor, 0.617 to 0.96 GHz, 350 W, 19 dB, 50 V, SOT1273-1, LDMOS
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDFP-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
17
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
108
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Drain-source On Resistance-Max (ohm)
0.3
Screening Level / Reference Standard
IEC-60134