BLC10G22XS-400AVTY
Ampleon Netherlands B.V.
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- 说明RF Power Transistor, 2.11 to 2.2 GHz, 400 W, 17 dB, 28 V, SOT1258-4, LDMOS
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PQFP-X6
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionQUAD
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Power Gain-Min (Gp) (dB)15.3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-40
- Drain-source On Resistance-Max (ohm)0.128
- Screening Level / Reference StandardIEC-60134
BLC10G22XS-400AVTY有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
BLC10G22XS-400AVTY
提交询价
BLC10G22XS-400AVTY