Ampleon Netherlands B.V. BLC10G18XS-360AVT | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLC10G18XS-360AVT

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PQFP-X6
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
QUAD
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
14.6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
65
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Drain-source On Resistance-Max (ohm)
0.148
Screening Level / Reference Standard
IEC-60134