- 生命周期状态Active
- 说明Power Field-Effect Transistor, 6.2A I(D), 650V, 1.7ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)40
- Drain Current-Max (ID) (A)6.2
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)200
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)13
- Turn-off Time-Max (toff) (ns)190
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)440
- Pulsed Drain Current-Max (IDM) (A)24.8
- Drain-source On Resistance-Max (ohm)1.7
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