Name: BL3400G-3L by CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Brand: CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
SKU: BL3400G-3L-145209583885

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD BL3400G-3L

生命周期状态
Active
说明
Power Field-Effect Transistor, 5.7A I(D), 30V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.4
Drain Current-Max (ID) (A)
5.7
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
65
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.4
Pulsed Drain Current-Max (IDM) (A)
25
Drain-source On Resistance-Max (ohm)
0.0265

BL3400G-3L

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD

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BL3400G-3L

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD

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