Name: BL20N06G by CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Brand: CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
SKU: BL20N06G-145209587271

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD BL20N06G

生命周期状态
Active
说明
Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
50
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
140
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
120
Turn-off Time-Max (toff) (ns)
140
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
170
Drain-source On Resistance-Max (ohm)
0.046
Screening Level / Reference Standard
MIL-STD-202

BL20N06G

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD

BL20N06G有0家供应商货源可供购买或竞价

提交询价

提交询价

提交询价

供应商

OEM & EMS

BL20N06G

CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD

BL20N06G有0家供应商货源可供购买或竞价

提交询价

提交询价

提交询价