BL120N03-3DL8
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
- 生命周期状态Active
- 说明Power Field-Effect Transistor, 35A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)25
- Drain Current-Max (ID) (A)35
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)130
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)18
- Pulsed Drain Current-Max (IDM) (A)140
- Drain-source On Resistance-Max (ohm)0.012
- Screening Level / Reference StandardMIL-STD-202
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