BL045N03T-3DL8
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
- 生命周期状态Active
- 说明Power Field-Effect Transistor, 65A I(D), 150V, 0.0045ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)29
- Drain Current-Max (ID) (A)65
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)150
- Feedback Cap-Max (Crss) (pF)70
- Operating Temperature-Max (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)260
- Drain-source On Resistance-Max (ohm)0.0045
- Screening Level / Reference StandardMIL-STD-202
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