- 生命周期状态Active
- 说明Power Field-Effect Transistor, 130A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Additional FeatureTUBE: 80
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)48
- Drain Current-Max (ID) (A)130
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)207
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)168
- Pulsed Drain Current-Max (IDM) (A)350
- Drain-source On Resistance-Max (ohm)0.0024
- Screening Level / Reference StandardMIL-STD-202
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