INFINEON TECHNOLOGIES AG BG3123H6327XTSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BG3123H6327XTSA1

生命周期状态
EOL
说明
MOSFET N-CH DUAL 8V 25MA SOT363
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, DEPLETION MODE
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
0.02
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Configuration
2 N-Channel (Dual)