INFINEON TECHNOLOGIES AG BFR840L3RHESD | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BFR840L3RHESD

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon Germanium, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e4
Case Connection
EMITTER
Terminal Finish
Gold (Au)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
X BAND
Moisture Sensitivity Level
1
Transistor Element Material
SILICON GERMANIUM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.035
Collector-emitter Voltage-Max (V)
2.25
Transition Frequency-Nom (fT) (MHz)
75000
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED