INFINEON TECHNOLOGIES AG BFR193L3E6327XTMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BFR193L3E6327XTMA1

生命周期状态
NRFND
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF BJT NPN 12V 0.08A 580mW 3-Pin TSLP T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e4
Case Connection
COLLECTOR
Terminal Finish
Gold (Au)
Terminal Position
BOTTOM
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
DC Current Gain-Min (hFE)
70
Power Dissipation-Max (W)
0.58
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.08
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
12
Collector-base Capacitance-Max (pF)
0.9
Transition Frequency-Nom (fT) (MHz)
8000
Screening Level / Reference Standard
AEC-Q101