INFINEON TECHNOLOGIES AG BFP640FESD | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BFP640FESD

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e3
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
X BAND
DC Current Gain-Min (hFE)
110
Power Dissipation-Max (W)
0.2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON GERMANIUM CARBON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.05
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
4.1
Transition Frequency-Nom (fT) (MHz)
46000
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED