BFM12R3
TT ELECTRONICS PLC
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JESD-609 Codee3
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN
- Number of Elements1
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)5 A
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DS Breakdown Voltage-Min70 V
- Transistor Element MaterialSILICON
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