TT ELECTRONICS PLC BFM12 | 搜芯易Sourcengine

TT ELECTRONICS PLC BFM12

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Number of Elements
1
Qualification Status
Not Qualified
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
5 A
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DS Breakdown Voltage-Min
70 V
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED