BFL4026
SANYO Electric Co.,Ltd.
- 生命周期状态Transferred
- 说明Power Field-Effect Transistor, 3.5A I(D), 900V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)35
- Drain Current-Max (ID) (A)3.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)900
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)140
- Pulsed Drain Current-Max (IDM) (A)10
- Drain-source On Resistance-Max (ohm)3.6
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BFL4026