Siemens AG BFG235E6327 | 搜芯易Sourcengine

Siemens AG BFG235E6327

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT IN EMITTER BALLASTING RESISTOR
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.3
Collector-emitter Voltage-Max (V)
15
Collector-base Capacitance-Max (pF)
3.6
Transition Frequency-Nom (fT) (MHz)
5500