Siemens AG BFG235 | 搜芯易Sourcengine

Siemens AG BFG235

生命周期状态
Transferred
说明
RF Power Bipolar Transistor, 1-Element, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
BUILT IN EMITTER BALLASTING RESISTOR
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
2
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.3
Operating Temperature-Max (Cel)
150