BF1202WR
PHILIPS SEMICONDUCTORS
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Terminal FinishMATTE TIN
- Number of Elements1
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.2
- Drain Current-Max (ID) (A)0.03
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
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BF1202WR
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BF1202WR