INFINEON TECHNOLOGIES AG BF1005E6327HTSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BF1005E6327HTSA1

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans RF MOSFET N-CH 8V 0.025A Automotive AEC-Q101 4-Pin SOT-143 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
DUAL GATE, ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
0.025
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
12
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED