ONSEMI BDX53CTU | 搜芯易Sourcengine

ONSEMI BDX53CTU

生命周期状态
EOL
RoHS
符合RoHS标准
说明
TRANS NPN DARL 100V 8A TO220-3
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
750
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Power Dissipation-Max (Abs)
60 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
100 V
Transition Frequency-Nom (fT)
20 MHz