COMSET SEMICONDUCTORS BDV65C | 搜芯易Sourcengine

COMSET SEMICONDUCTORS BDV65C

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
NPN power transistor, BDV65C, COMSET The BDV65C is a silicon epitaxial base transistor mounted in TO-3PN. It is designed for audio output stages and general amplifier and switching applications. Features Compliance to RoHS
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
2
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
1000
Power Dissipation-Max (W)
125
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
12
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
120
Power Dissipation Ambient-Max (W)
3.5