INFINEON TECHNOLOGIES AG BDP950-E6327 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BDP950-E6327

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Bipolar Transistor, 1-Element, Silicon, PNP
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.5
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
85
Power Dissipation-Max (W)
3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
60
Collector-base Capacitance-Max (pF)
40
Transition Frequency-Nom (fT) (MHz)
100