COMSET SEMICONDUCTORS BD679A | 搜芯易Sourcengine

COMSET SEMICONDUCTORS BD679A

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.8 V
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON
JEDEC-95 Code
TO-126
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Transistor Application
AMPLIFIER
Turn-on Time-Max (ton)
1500 ns
Turn-off Time-Max (toff)
5000 ns
DC Current Gain-Min (hFE)
750
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
4 A
Power Dissipation-Max (Abs)
40 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
80 V
Transition Frequency-Nom (fT)
0.06 MHz