ONSEMI BD678 | 搜芯易Sourcengine

ONSEMI BD678

生命周期状态
EOL
说明
Darlington Transistors 4A 60V Bipolar
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSFM-T3
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-225AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
750
Power Dissipation-Max (W)
40
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Collector Current-Max (IC) (A)
4
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
60
Transition Frequency-Nom (fT) (MHz)
10