BCW67A
Siemens AG
- 生命周期状态Transferred
- 说明Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- VCEsat-Max (V)0.7
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)35
- Power Dissipation-Max (W)0.225
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.8
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)32
- Power Dissipation Ambient-Max (W)0.33
- Transition Frequency-Nom (fT) (MHz)200
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BCW67A