INFINEON TECHNOLOGIES AG BCR22PNE6433HTMA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BCR22PNE6433HTMA1

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
TRANS NPN/PNP PREBIAS SOT363
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.3 V
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTANCE RATIO IS 1
Number of Elements
2
Reference Standard
AEC-Q101
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.25 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
130 MHz
Collector-base Capacitance-Max
3 pF