Hitachi, Ltd. BB601M | 搜芯易Sourcengine

Hitachi, Ltd. BB601M

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.15
Drain Current-Max (ID) (A)
0.02
Operating Temperature-Max (Cel)
150