TEMIC SEMICONDUCTORS BA682GS18 | 搜芯易Sourcengine

TEMIC SEMICONDUCTORS BA682GS18

生命周期状态
Transferred
说明
Mixer Diode, Very High Frequency, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
JESD-30 Code
O-LELF-R2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
YES
Terminal Form
WRAP AROUND
Frequency Band
VERY HIGH FREQUENCY
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
END
Number of Elements
1
Number of Terminals
2
Package Body Material
GLASS
Diode Element Material
SILICON
Output Current-Max (A)
100
Forward Voltage-Max (V)
1
Reverse Current-Max (uA)
0.05
Breakdown Voltage-Min (V)
35
Diode Capacitance-Max (pF)
1.5
Operating Temperature-Max (Cel)
150