VISHAY SEMICONDUCTORS B125C1000G/72 | 搜芯易Sourcengine

VISHAY SEMICONDUCTORS B125C1000G/72

生命周期状态
Discontinued
说明
Bridge Rectifier Diode, 1 Phase, 1.2A, 200V V(RRM), Silicon
类别
Semiconductors Diodes Bridge Rectifier Diodes BRIDGE RECTIFIER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
BRIDGE RECTIFIER DIODE
JESD-30 Code
O-PBCY-W4
Configuration
BRIDGE, 4 ELEMENTS
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Number of Phases
1
Terminal Position
BOTTOM
Number of Elements
4
Output Current-Max
1.2 A
Number of Terminals
4
Qualification Status
Not Qualified
Breakdown Voltage-Min
200 V
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
Rep Pk Reverse Voltage-Max
200 V
Non-rep Pk Forward Current-Max
45 A