International Rectifier Corporation AUIRFN8459TR | 搜芯易Sourcengine

International Rectifier Corporation AUIRFN8459TR

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 50A I(D), 40V, 0.0059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Additional Feature
ULTRA LOW RESISTANCE
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
50
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
66
Pulsed Drain Current-Max (IDM) (A)
320
Drain-source On Resistance-Max (ohm)
0.0059
Screening Level / Reference Standard
AEC-Q101