ATF854S12N
ANSALDO S P A - DIV ELECTRONICA
- 生命周期状态Contact Mfr
- 说明Silicon Controlled Rectifier, 685A I(T), 1200V V(DRM)
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Leakage Current-Max50 mA
- Trigger Device TypeSCR
- On-State Voltage-Max1.6 V
- On-state Current-Max685 A
- Operating Temperature-Max125 Cel
- DC Gate Trigger Current-Max350 mA
- DC Gate Trigger Voltage-Max3.5 V
- Non-Repetitive Pk On-state Cur8800 A
- Repetitive Peak Off-state Voltage1200 V
- Circuit Commutated Turn-off Time-Nom35 us
- Critical Rate of Rise of Off-state Voltage-Min500 V/us
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ATF854S12N