Broadcom Inc. ATF-55143-TR2 | 搜芯易Sourcengine

Broadcom Inc. ATF-55143-TR2

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
15.5 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.1 A
Highest Frequency Band
C BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
5 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
0.27 W