Agilent Technologies, Inc. ATF-541M4-TR2G | 搜芯易Sourcengine

Agilent Technologies, Inc. ATF-541M4-TR2G

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CBCC-N4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e3
Operating Mode
DEPLETION MODE
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
15.5
Drain Current-Max (ID) (A)
0.12
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
5