Agilent Technologies, Inc. ATF-54143-BLKG | 搜芯易Sourcengine

Agilent Technologies, Inc. ATF-54143-BLKG

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
15
Drain Current-Max (ID) (A)
0.12
Moisture Sensitivity Level
1
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
5
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.725