Agilent Technologies, Inc. ATF-531P8-TR2 | 搜芯易Sourcengine

Agilent Technologies, Inc. ATF-531P8-TR2

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
S-PDSO-N8
Configuration
SINGLE
JEDEC-95 Code
MO-229
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
18.5
Drain Current-Max (ID) (A)
0.3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
7
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
1